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Germanium nanowires: synthesis, morphology and local structure studies

机译:锗纳米线:合成,形态和局部结构研究

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Germanium nanowires (GeNWs) have been synthesized by the thermal evaporation of Ge powder at 950 deg C onto silicon wafer and ceramic (alumina) substrate using Au nanoparticles as a catalyst via a vapour-liquid-solid (VLS) process. The morphology, crystal structure and growth direction of the as-prepared GeNWs have been characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM). GeNWs are uniform with a diameter of approx 30 nm and lengths of tens of micrometres. High-resolution TEM shows that an individual GeNW is a single crystal with a diamond structure and a preferred growth along the (111) direction. Au nanoparticles are found at the tip of GeNWs indicating that the growth of GeNWs follows a VLS mechanism. The electronic and local structures of the as-prepared GeNWs have also been investigated by x-ray absorption fine structure spectroscopy (XAFS). The results and the implications will be discussed.
机译:锗纳米线(GeNWs)是通过在950摄氏度下通过蒸气液固(VLS)工艺将金粉以金纳米粒子为催化剂热蒸发到硅片和陶瓷(氧化铝)基板上而合成的。通过扫描电子显微镜(SEM),X射线衍射(XRD)和透射电子显微镜(TEM)表征了所制备的GeNW的形态,晶体结构和生长方向。 GeNW是均匀的,直径约为30 nm,长度为数十微米。高分辨率TEM显示单个GeNW是具有菱形结构且沿(111)方向优先生长的单晶。在GeNW的尖端发现了金纳米颗粒,表明GeNW的生长遵循VLS机制。制备的GeNW的电子和局部结构也已通过X射线吸收精细结构光谱法(XAFS)进行了研究。将讨论结果及其含义。

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