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Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

机译：Si（111）衬底上InAlGaN合金中纳米级铟簇形成的温度依赖性

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摘要

The temperature dependence of the formation of nano-scale indium clusters in InAlGaN quaternary alloys, which are grown by metalorganic chemical vapour deposition on GaN/Si(111) epilayers, is investigated. Firm evidence is provided to support the existence of phase separation, or nano-scale In-rich clusters, by the combined results of high-resolution transmission electron microscopy (HRTEM), high-resolution x-ray diffraction (HRXRD) and micro-Raman spectra. The results of HRXRD and Raman spectra indicate that the degree of phase separation is strong and the number of In clusters in the InAlGaN layers on silicon substrate is higher at lower growth temperatures than that at higher growth temperatures, which limits the In and Al incorporated into the InAlGaN quaternary alloys. The detailed mechanism of luminescence in this system is studied by low temperature photoluminescence (LT-PL). We conclude that the ultraviolet (UV) emission observed in the quaternary InAlGaN alloys arises from the matrix of a random alloy, and the second emission peak in the blue-green region results from the nano-scale indium clusters.
机译：研究了通过在GaN / Si（111）外延层上进行金属有机化学气相沉积而生长的InAlGaN第四纪合金中纳米级铟簇的形成的温度依赖性。高分辨率透射电子显微镜（HRTEM），高分辨率X射线衍射（HRXRD）和显微拉曼光谱的综合结果提供了有力的证据来支持相分离或纳米级富In团簇的存在光谱。 HRXRD和拉曼光谱的结果表明，在较低的生长温度下，硅衬底上的InAlGaN层中的In团簇数较高，并且在较高的生长温度下，In团簇数较高，这限制了In和Al掺入硅中。 InAlGaN四元合金。通过低温光致发光（LT-PL）研究了该系统中发光的详细机理。我们得出的结论是，在四元InAlGaN合金中观察到的紫外线（UV）发射来自无规合金的基体，而蓝绿色区域中的第二个发射峰则来自纳米级铟簇。

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