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首页> 外文期刊>Nanotechnology >Fast switching behavior of nanoscale Ag6In5Sb59Te30 based nanopillar type phase change memory
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Fast switching behavior of nanoscale Ag6In5Sb59Te30 based nanopillar type phase change memory

机译：基于纳米Ag6In5Sb59Te30的纳米柱型相变存储器的快速切换行为

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摘要

Ag and In co-doped SbTe phase change material (AgInSbTe) was used to fabricate nanopillar phase change memory. The AgInSbTe nanopillar type phase change device with 200 nm of diameter was fabricated by nanoimprint lithography and was reversibly changed between the resistances of 10(4) and 10(6) Omega by applying set/reset pulses using conducting atomic force microscopy. Due to the fast crystallization nature of AgInSbTe, the set operation of the device could be done with only 50 ns of set pulse. The fast crystallization nature of AgInSbTe is also responsible for the decrease in reset voltage of devices set with a short pulse.
机译：Ag和In共掺杂的SbTe相变材料（AgInSbTe）用于制造纳米柱相变存储器。通过纳米压印光刻技术制造了直径为200 nm的AgInSbTe纳米柱型相变器件，并使用原子力显微镜通过施加置位/复位脉冲在10（4）和10（6）Ω的电阻之间可逆地进行了改变。由于AgInSbTe的快速结晶特性，只需50 ns的设置脉冲即可完成器件的设置操作。 AgInSbTe的快速结晶特性还可以降低设置短脉冲的器件的复位电压。

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