We have found that the depinning field of domain walls (DWs) in permalloy (Ni_(81)Fe_(19)) nanowires can be experimentally controlled by interactions between magnetic stray fields and artificial constrictions. A pinning geometry that consists of a notch and a nanobar is considered, where a DW traveling in the nanowire is pinned by the notch with a nanobar vertical to it. We have found that the direction of magnetization of the nanobar affects the shape and local energy minimum of the potential landscape experienced by the DW; therefore, the pinning strength strongly depends on the interaction of the magnetic stray field from the nanobar with the external pinning force of the notch. The mechanism of this pinning behavior is applied for the instant and flexible control of the pinning strength with respect to various DW motions in DW-mediated magnetic memory devices.
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