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Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique

机译:通过离子束辅助过滤阴极真空电弧技术制备的对准的InN纳米指

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摘要

We report the synthesis of aligned wurtzite InN nanofingers by the ion-beam assisted filtered cathodic vacuum arc technique. InN nanofingers exhibit a polycrystalline structure. Photoluminescence (PL) and field emission properties of the InN nanofingers were studied. The PL emission peak was centred at approx 1.1 eV with a full width at half maximum of 105 meV. The field emission characteristic was observed from the InN nanofingers with turn-on field of 9.7 V mu m~(-1) at a current density of 10 mu A cm~(-2). The formation of InN nanofingers was attributed to the Volmer-Weber growth mode.
机译:我们报告了通过离子束辅助过滤阴极真空电弧技术合成的取向纤锌矿InN纳米指。 InN纳米指表现出多晶结构。研究了InN纳米指的光致发光(PL)和场发射特性。 PL发射峰的中心大约为1.1 eV,半峰全宽为105 meV。在电流密度为10μAcm〜(-2)的情况下,从InN纳米指的导通场为9.7 Vμm〜(-1)观察到场发射特性。 InN纳米指的形成归因于Volmer-Weber生长模式。

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