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Controlled fabrication of poly- and single-crystalline bismuth nanowires

机译：多晶和单晶铋纳米线的受控制备

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摘要

Poly- and single-crystalline Bi nanowires are fabricated by electrochemical deposition in etched ion-track membranes. Two deposition parameters, voltage and temperature, strongly influence the nanowires' morphology and texture. X-ray diffraction (XRD) and transmission electron microscopy (TEM) reveal that potentiostatically deposited nanowires are (110) textured, the texture increasing for wires deposited at higher temperatures and smaller overpotentials. At T = 60 ° C and low overpotentials, single-crystalline wires are produced. Wires deposited with reverse pulses exhibit a (100) texture, which is more pronounced for shorter cathodic cycles and higher anodic voltages. They consist of several crystals of size at least ∼ 0.5 μ m.
机译：多晶和单晶Bi纳米线是通过在蚀刻的离子跟踪膜中进行电化学沉积而制成的。电压和温度这两个沉积参数会强烈影响纳米线的形态和质地。 X射线衍射（XRD）和透射电子显微镜（TEM）显示，恒电位沉积的纳米线具有（110）织构，对于在较高温度和较小超电势下沉积的导线，织构增加。在T = 60＆DEG; C和低过电位，产生单晶线。沉积有反向脉冲的导线表现出（100）织构，这对于较短的阴极周期和较高的阳极电压尤为明显。它们由大小至少为＆SIM的几个晶体组成; 0.5微米

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