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Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001)

机译：生长速率对Si（001）中小屋形Ge岛形貌和结构性能的影响

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The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500 deg C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02-2 ML s~(-1), to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s~(-1) to 9.8 nm at R = 2 ML s~(-1). The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19 percent at R = 2 ML s~(-1). Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (approx 0.9).
机译：研究了Ge沉积速率对自组装Ge / Si（001）岛形貌和结构性能的影响。 Ge / Si（001）层是通过在500摄氏度下通过固源分子束外延生长的。我们调整了Ge的覆盖率，6个单层（ML），并将Ge的生长速率改变了100倍，R = 0.02- 2 ML s〜（-1），以生产由小屋形Ge岛组成的薄膜。通过扫描隧道显微镜，拉曼光谱和卢瑟福反向散射测量对样品进行表征。 Ge纳米团簇的平均横向尺寸从R = 0.02 ML s〜（-1）时的14.1 nm减小到R = 2 ML s〜（-1）时的9.8 nm。尺寸分布的归一化宽度显示为R的函数的非单调行为，并且在R = 2 ML s〜（-1）时最小值为19％。以最高沉积速率制造的Ge纳米团簇显示出最佳的结构质量和最高的Ge含量（约0.9）。

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