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Step-shaped bismuth nanowires with metal-semiconductor junction characteristics

机译:具有金属-半导体结特性的阶梯形铋纳米线

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Uniform and step-shaped Bi nanowire (NW) arrays have been synthesized by electrochemical deposition inside the uniform and step-shaped nanochannels of an anodic aluminium oxide template. These Bi NWs are highly oriented and single crystalline. The current-voltage characteristics of the parallel uniform Bi nanowires show that the contacts between Bi NWs and gold film do not make significant contributions to the I-V characteristics of the step-shaped Bi NWs. The diameters of the thick segment and the thin segment of the step-shaped Bi NWs are about 70 and 40 nm, respectively. Their current-voltage characteristics show conventional metal-semiconductor junction behaviour. The approach can be exploited to produce one-dimensional metal-semiconductor junctions using step-shaped NWs consisting of other semi-metals without any external doping, which may find various applications in nanotechnology.
机译:已经通过在阳极氧化铝模板的均匀且阶梯状的纳米通道内进行电化学沉积来合成均匀且阶梯状的Bi纳米线(NW)阵列。这些Bi NW是高度取向的单晶。平行的均匀Bi纳米线的电流-电压特性表明,Bi NW和金膜之间的接触对阶梯形Bi NW的I-V特性没有显着贡献。阶梯形Bi NW的厚段和薄段的直径分别为约70和40nm。它们的电流-电压特性显示出常规的金属-半导体结行为。可以利用这种方法,使用由其他半金属组成的阶梯形NW来产生一维金属-半导体结,而无需任何外部掺杂,这可以在纳米技术中找到各种应用。

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