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Effect of material anisotropy on the self-positioning of nanostructures

机译：材料各向异性对纳米结构自定位的影响

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摘要

An experimental and numerical investigation of the effect of material anisotropy on the self-positioning of epitaxial nanostructures has been performed. The self-positioning occurs due to a lattice mismatch between two epitaxial material layers (GaAs and In_(0.2)Ga_(0.8)As) of a hinge. Both materials have cubic crystal symmetry and possess anisotropic mechanical properties. The dependence of the hinge curvature radius on the material orientation angle was obtained experimentally by creating self-positioning hinges with different angles between the hinge axis and material crystallographic axes. The same self-positioning structures were modelled by solving geometrically nonlinear problems with the help of the finite element method. Experimental and numerical values of the hinge curvature radius are in qualitative agreement. It is found that material anisotropy significantly affects the shape of self-positioning structures.
机译：实验和数值研究材料各向异性对外延纳米结构的自定位的影响。由于铰链的两个外延材料层（GaAs和In_（0.2）Ga_（0.8）As）之间的晶格失配而发生自定位。两种材料都具有立方晶体对称性并具有各向异性的机械性能。通过创建在铰链轴和材料结晶轴之间具有不同角度的自定位铰链，可以通过实验获得铰链曲率半径对材料定向角的依赖性。借助有限元方法，通过解决几何非线性问题，对相同的自定位结构进行了建模。铰链曲率半径的实验和数值在质量上是一致的。发现材料各向异性显着影响自定位结构的形状。

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