We have studied the formation of ohmic contacts to InAs nanowires by chemical etching and passivation of the contact areas in an ammonium polysulfide, (NH4)(2)S-x, water solution. The nanowires were exposed to different dilution levels of the (NH4)(2)Sx solution before contact metal evaporation. A process based on a highly diluted ( NH4)S-2(x) solution was found to be self-terminating, with minimal etching of the InAs. The stability of the contacts was investigated with electrical measurements as a function of storage time in vacuum and air.
展开▼
