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Control of adsorption and alignment of V_2O_5 nanowires via chemically functionalized patterns

机译:通过化学功能化模式控制V_2O_5纳米线的吸附和排列

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We developed a method to precisely control the locations and orientations of deposited divanadium pentoxide (V_2O_5) nanowires on SiO_2 surfaces using chemically functionalized patterns. The nanowires were deposited onto the substrates either from solution or via the edge transfer mechanism of micro-contact printing. In both cases, negatively charged V_2O_5 nanowires showed a strong adsorption selectivity onto 3-aminopropyltriethoxysilane (APS) self-assembled monolayers (SAMs) with positively charged functional groups, whereas the SAMs with non-polar and neutral terminal groups of octadecyltrichlorosilane (OTS) worked as perfect passivation layers. In particular, directional alignment of nanowires inside the chemically patterned area, depending upon the shapes of the patterns, was observed. The wires were aligned along the long axis of the pattern when the width of the APS pattern was as small as 1 mu m. This strategy allows us to control the adsorption and alignment of V_2O_5 nanowires on the substrates, which could be used for various nano-device applications such as interconnection of electronic circuits.
机译:我们开发了一种使用化学功能化图案精确控制SiO_2表面上沉积的五氧化二钒(V_2O_5)纳米线的位置和方向的方法。通过溶液或通过微接触印刷的边缘转移机制将纳米线沉积在基底上。在这两种情况下,带负电的V_2O_5纳米线在带正电官能团的3-氨基丙基三乙氧基硅烷(APS)自组装单分子膜(SAMs)上均显示出较强的吸附选择性,而具有十八烷基三氯硅烷(OTS)的非极性和中性末端基团的SAMs起作用作为完美的钝化层。特别地,观察到化学图案区域内的纳米线的方向对准,这取决于图案的形状。当APS图案的宽度小至1微米时,导线沿图案的长轴对齐。这种策略使我们能够控制V_2O_5纳米线在基板上的吸附和排列,这可用于各种纳米设备应用,例如电子电路的互连。

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