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首页> 外文期刊>Nanotechnology >MeV Au irradiation induced nanoparticle formation and recrystallization in a low energy Au implanted Si layer
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MeV Au irradiation induced nanoparticle formation and recrystallization in a low energy Au implanted Si layer

机译：MeV Au辐照诱导低能Au注入Si层中纳米颗粒的形成和重结晶

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摘要

Au implantation at 32 keV into Si(100), in a fluence range of 1 x 10(15)-1 x 10(17) cm(-2), has been used to produce a gold-rich damaged Si layer of thickness around 30 nm. Local recrystallization of this layer, induced by 1.5 MeV Au irradiation, to a fluence of 1 x 10(15) cm(-2), has been studied using Raman scattering, photoluminescence (PL) and x-ray photoemission spectroscopy (XPS). For a sample with a low energy An fluence of 5 x 10(15) cm(-2), the MeV Au irradiation has been found to result in Si nanocrystal (NC) formation. The size of the NCs, as estimated from the PL data, has been found to be about 4 nm, which agrees well with the result of a thermal spike model calculation. Annealing of the sample at 500 degrees C resulted in an enhanced PL signal, without any significant shift in peak position, indicating an increase in the local concentration of the NCs. In the case of samples with an initial Au fluence above 1 x 10(16) cm(-2), the MeV An irradiation has been found to result in better overall recrystallization of the amorphous layer, with silicide formation as observed by XPS. However, there was no PL signal, indicating the absence of Si NCs in the system. The results suggest that the initial amorphizing Au fluence plays a crucial role in Si NC formation induced by MeV ion irradiation.
机译：在1 ke x 10（15）-1 x 10（17）cm（-2）的注量范围内以32 keV的Au注入到Si（100）中，已被用来制造厚度约为1500毫米的富含金的损坏的Si层30纳米使用拉曼散射，光致发光（PL）和X射线光电子能谱（XPS）研究了通过1.5 MeV Au辐射诱导的该层的局部重结晶，其通量为1 x 10（15）cm（-2）。对于具有5 x 10（15）cm（-2）的低能量通量的样品，已经发现MeV Au辐射会导致形成Si纳米晶体（NC）。根据PL数据估算，NC的尺寸约为4 nm，这与热尖峰模型计算的结果非常吻合。样品在500摄氏度下退火导致PL信号增强，峰位置没有任何明显变化，表明NC的局部浓度增加。在样品的初始Au能量通量高于1 x 10（16）cm（-2）的情况下，已经发现MeV An辐射可导致非晶层更好的整体重结晶，并通过XPS观察到形成了硅化物。但是，没有PL信号，表明系统中没有Si NC。结果表明，初始非晶化Au能量密度在MeV离子辐照诱导的Si NC形成中起关键作用。

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