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Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals

机译：氧化锗包裹的锗纳米和微晶中的近红外光致发光

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摘要

We have studied the near-infrared photoluminescence properties of free-standing germanium nano-crystals (20 nm on average) and micro-crystals (60 mu m on average) at 80-300 K. Two peaks were observed at similar to 1.0 and similar to 1.4 eV from both the nano-and micro-crystals. The integrated PL (I-PL) intensity of the nano-crystals is about an order of magnitude stronger than that of the micro-crystals and the IPL is also enhanced by ageing in air for both crystals. The similar to 1.0 eV peak position does not change with either the crystal size or temperature. We suggest that the deep traps located at the interfacial region between the surface GeO2 layer and the bulk crystal Ge is responsible for the near-infrared PL.
机译：我们研究了独立的锗纳米晶体（平均20 nm）和微晶体（平均60μm）在80-300 K下的近红外光致发光特性。在与1.0和1.0相似的位置观察到两个峰纳米晶体和微晶晶体都可以达到1.4 eV。纳米晶体的积分PL（I-PL）强度比微晶体的积分PL（I-PL）强度强大约一个数量级，并且两种晶体的空气老化也可以增强IPL。类似于1.0 eV的峰值位置不会随晶体大小或温度而变化。我们认为，位于表面GeO2层和块状晶体Ge之间的界面区域的深陷阱是近红外PL的原因。

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