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Nanocontact resistance and structural disorder induced resistivity variation in metallic metal-oxide nanowires

机译：金属金属氧化物纳米线中的纳米接触电阻和结构紊乱引起的电阻率变化

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摘要

Several systems of metallic metal-oxide nanowires (NWs), including pure RuO2 and as-implanted and annealed Ru0.98Cu0.02O2 and Ru0.93Cu0.07O2 NWs, have been employed in two-probe electrical characterizations by using a transmission electron microscope-scanning tunneling microscope technique with a gold tip. Thermal, mechanical, and electron beam exposing treatments are consecutively applied to reduce the electrical contact resistance, generated from the interface between the NW and the gold tip, so as to evaluate the intrinsic NW resistance. It is found that the residual contact resistance cannot be entirely removed. For each system of metallic metal-oxide NWs, several tens of NWs are applied to electrical characterizations and the total resistances unveil a linear dependence on the ratio of the length to the area of the NWs. As a result, the average resistivity and the contact resistance of the metallic metal-oxide NWs could be evaluated at room temperatures. The average resistivities of pure RuO2 NWs agree well with the results obtained from standard two- and four-probe electrical-transport measurements. In addition, the as-implanted Cu-RuO2 NWs reveal disordered crystalline structures in high-resolution TEM images and give higher resistivities in comparison with that of pure RuO2 NWs. The residual contact resistances of all kinds of metallic metal-oxide NWs unveil, more surprisingly, an approximation value of several kilohms, even though the average resistivities of these NWs change by more than one order of magnitude. It is argued that the ductile gold tip makes one or more soft contacts on the stiff metal-oxide NWs with nanometer roughness and the nanocontacts on the NWs contribute to the electrical contact resistance.
机译：几种金属金属氧化物纳米线（NWs）系统，包括纯RuO2以及经植入和退火的Ru0.98Cu0.02O2和Ru0.93Cu0.07O2 NW，已通过透射电子显微镜用于两探针电表征中，金尖端的扫描隧道显微镜技术。连续施加热，机械和电子束曝光处理以减小由NW和金尖端之间的界面产生的电接触电阻，从而评估固有的NW电阻。发现残余接触电阻不能完全去除。对于金属金属氧化物NW的每个系统，数十个NW用于电特性分析，总电阻揭示了线性关系，这些线性依赖于NW的长度与面积之比。结果，可以在室温下评价金属金属氧化物NW的平均电阻率和接触电阻。纯RuO2 NW的平均电阻率与从标准二探针和四探针电传输测量获得的结果非常吻合。另外，与纯RuO2 NW相比，Cu-RuO2 NW的植入状态在高分辨率TEM图像中显示出无序的晶体结构，并具有更高的电阻率。各种金属金属氧化物NW的残余接触电阻更令人惊讶地揭露了几千千瓦的近似值，即使这些NW的平均电阻率变化超过一个数量级。有人认为，韧性金尖端在具有纳米粗糙度的硬金属氧化物纳米线上形成一个或多个软接触，并且纳米线上的纳米接触有助于电接触电阻。

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