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Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

机译：通过离子注入和等离子体增强化学气相沉积制造的基于Si纳米晶体的LED

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摘要

An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Devices fabricated by ion implantation exhibit a combination of direct current and field-effect luminescence under a bipolar pulsed excitation. The onset of the emission decreases with the Si excess from 6 to 3 V. The direct current emission is attributed to impact ionization and is associated with the reasonably high current levels observed in current–voltage measurements. This behaviour is in good agreement with transmission electron microscopy images that revealed a continuous and uniform Si nanocrystal distribution. The emission power efficiency is relatively low, 10 3%, and the emission intensity exhibits fast degradation rates, as revealed from accelerated ageing experiments. Devices fabricated by chemical deposition only exhibit field-effect luminescence, whose onset decreases with the Si excess from 20 to 6 V. The absence of the continuous emission is explained by the observation of a 5 nm region free of nanocrystals, which strongly reduces the direct current through the gate. The main benefit of having this nanocrystal-free region is that tunnelling current flow assisted by nanocrystals is blocked by the SiO2 stack so that power consumption is strongly reduced, which in return increases the device power efficiency up to 0.1%. In addition, the accelerated ageing studies reveal a 50% degradation rate reduction as compared to implanted structures.
机译：提出了对基于Si纳米晶体的MOSLED的物理和电学性质的深入研究。通过离子注入和等离子体增强化学气相沉积法，以不同浓度的Si制备了有源层。通过离子注入制造的器件在双极脉冲激励下具有直流电和场效应发光的组合。当Si过量从6 V降至3 V时，发射的开始时间减少。直流发射归因于碰撞电离，并且与在电流-电压测量中观察到的合理的高电流水平有关。此行为与揭示连续且均匀的Si纳米晶体分布的透射电子显微镜图像高度吻合。加速老化实验表明，发射功率效率相对较低，为10 3％，并且发射强度表现出快速的降解速率。通过化学沉积制造的器件仅表现出场效应发光，当Si过量从20 V降至6 V时，其开始发光。通过观察无纳米晶体的5 nm区域可以解释连续发光的缺乏，这大大降低了直接发光。电流通过门。具有该无纳米晶体的区域的主要好处是，由纳米晶体辅助的隧穿电流被SiO2堆阻挡，从而大大降低了功耗，从而将器件的功率效率提高了0.1％。此外，加速老化研究表明，与植入结构相比，退化率降低了50％。

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