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An in situ investigation of electromigration in Cu nanowires

机译：铜纳米线中电迁移的原位研究

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摘要

Electromigration in copper (Cu) nanowires deposited by electron beam evaporation has been investigated using both resistance measurement and the in situ scanning electron microscopy technique. During electromigration, voids formed at the cathode end while hillocks ( or extrusions) grew close to the anode end. The failure lifetimes were measured for various applied current densities and the mean temperature in the wire was estimated. Electromigration activation energies of 1.06 eV and 0.94 eV were found for the wire widths of 90 nm and 141 nm, respectively. These results suggest that the mass transport of Cu during electromigration mainly occurs along the wire surfaces. Further investigations of the Auger electron spectrum show that both Cu atoms and the surface contaminants of carbon and oxygen migrate from cathode to anode under the electrical stressing.
机译：使用电阻测量和原位扫描电子显微镜技术研究了通过电子束蒸发沉积的铜（Cu）纳米线中的电迁移。在电迁移过程中，在阴极端形成空隙，而小丘（或突起）在阳极端附近生长。针对各种施加的电流密度测量了故障寿命，并估算了导线中的平均温度。对于90nm和141nm的线宽，发现分别为1.06eV和0.94eV的电迁移活化能。这些结果表明，在电迁移过程中，Cu的质量传输主要发生在金属丝表面。对俄歇电子能谱的进一步研究表明，在电应力作用下，铜原子以及碳和氧的表面污染物都从阴极迁移到阳极。

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