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In situ characterization of vertically oriented carbon nanofibers for three-dimensional nano-electro-mechanical device applications

机译：垂直定向碳纳米纤维在三维纳米机电装置中的原位表征

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摘要

We have performed mechanical and electrical characterization of individual as-grown, vertically oriented carbon nanofibers (CNFs) using in situ techniques, where such high-aspect-ratio, nanoscale structures are of interest for three-dimensional (3D) electronics, in particular 3D nano-electro-mechanical- systems (NEMS). Nanoindentation and uniaxial compression tests conducted in an in situ nanomechanical instrument, SEMentor, suggest that the CNFs undergo severe bending prior to fracture, which always occurs close to the bottom rather than at the substrate-tube interface, suggesting that the CNFs are well adhered to the substrate. This is also consistent with bending tests on individual tubes which indicated that bending angles as large as ～70° could be accommodated elastically. In situ electrical transport measurements revealed that the CNFs grown on refractory metallic nitride buffer layers were conducting via the sidewalk, whereas those synthesized directly on Si were electrically unsuitable for low-voltage dc NEMS applications. Electrostatic actuation was also demonstrated with a nanoprobe in close proximity to a single CNF and suggests that such structures are attractive for nonvolatile memory applications. Since the magnitude of the actuation voltage is intimately dictated by the physical characteristics of the CNFs, such as diameter and length, we also addressed the ability to tune these parameters, to some extent, by adjusting the plasma-enhanced chemical vapor deposition growth parameters with this bottom-up synthesis approach.
机译：我们已经使用原位技术对单个生长的垂直取向的碳纳米纤维（CNF）进行了机械和电气表征，这种高纵横比的纳米级结构是三维（3D）电子学尤其是3D感兴趣的结构纳米机电系统（NEMS）。在原位纳米机械仪器SEMentor中进行的纳米压痕和单轴压缩测试表明，CNF在断裂之前会经历严重弯曲，该弯曲通常发生在底部附近，而不是在基材-管界面处发生，这表明CNF良好地粘附基板。这也与对单个管的弯曲测试相一致，弯曲测试表明可以弹性适应约70°的弯曲角度。原位电迁移测量表明，在耐火金属氮化物缓冲层上生长的CNF通过人行道传导，而直接在Si上合成的CNF在电气上不适合低压直流NEMS应用。还用纳米探针紧贴单个CNF证明了静电驱动，这表明这种结构对非易失性存储应用具有吸引力。由于驱动电压的大小直接取决于CNF的物理特性（例如直径和长度），因此，我们还解决了在一定程度上通过调整等离子体增强化学气相沉积生长参数来调节这些参数的能力。这种自下而上的综合方法。

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