Wires with meso- and nanoscale widths have been fabricated using a novel assembly technique based on the deposition of Sb clusters on templated surfaces. The template elements are V-grooves etched into the surface of a Si wafer. It is demonstrated that the clusters bounce or slide to the apex of the V-grooves, without significant fragmentation, and that this motion is the underlying mechanism behind the formation of the wires. The flow rate of inert gas into the cluster growth chamber controls the average velocity of the clusters and the morphology and width of the wires. Sb cluster-assembled wires with lengths over 150 mu m and widths down to 100 nm have been assembled from approx 40 nm diameter Sb clusters. Electrical contacts to the wires have been achieved via lithographic alignment of NiCr/Au contacts to the V-grooves prior to deposition.
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