Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer

Jo M.; Mano T.; Sakoda K.

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Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer

机译：GaAs量子点与二维层耦合的超窄光发射

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We report electrically injected lasing in GaAs quantum dots (QDs) grown on GaAs(001) by droplet epitaxy. High-quality GaAs QDs with superior uniformity are formed using improved growth techniques involving the insertion of a two-dimensional layer, control of the As flux for GaAs crystallization, and thin AlGaAs layer capping with high-temperature annealing. The QDs show ultra-narrow luminescence with a linewidth of 20meV. Ground-state lasing from a laser diode containing fivefold-stacked QD layers is observed at low temperature under pulsed operation.

机译：我们报告通过液滴外延生长在GaAs（001）上的GaAs量子点（QD）中的电注入激光。使用改进的生长技术（包括插入二维层，控制用于GaAs结晶的As焊剂以及通过高温退火覆盖的薄AlGaAs层），可以形成具有优异均匀性的高质量GaAs QD。量子点显示超窄发光，线宽为20meV。在低温下以脉冲操作观察到来自包含五重堆叠QD层的激光二极管的基态激光发射。

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《Nanotechnology》 |2011年第33期|共4页
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Jo M.; Mano T.; Sakoda K.;
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1. Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer [J] . Jo M., Mano T., Sakoda K. Nanotechnology . 2011,第33期

机译：GaAs量子点与二维层耦合的超窄光发射
2. InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 μm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy [J] . Kwang Woong KIM, Nam Ki CHO, Sung Phil RYU, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第10A期

机译：具有原子层外延生长的三层叠层阱结构的InAs / GaAs量子点激光二极管，激光发射波长为1.3μm
3. Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature [J] . S. Shah, K. Ghosh, S. Jejurikar, Materials Research Bulletin . 2013,第8期

机译：覆盖有InGaAs层的单层和多层耦合InAs / GaAs量子点中的基态能量趋势：InGaAs层厚度和退火温度的影响
4. Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser [C] . Yongqiang Ning, Xin Gao, Lijun Wang . 2001

机译：InGaAs / GaAs多层量子点耦合激光器的激光特性
5. Energy band alignments at metal/molecular layer/semiconductor and metal/quantum dot interfaces using Ballistic Electron Emission Microscopy. [D] . Marginean, Camelia. 2009

机译：使用弹道电子发射显微镜在金属/分子层/半导体和金属/量子点界面进行能带对准。
6. Emission from quantum-dot high-β microcavities: transition from spontaneous emission to lasing and the effects of superradiant emitter coupling [O] . Sören Kreinberg, Weng W Chow, Janik Wolters, 2017

机译：量子点高β微腔的发射：从自发发射到激光发射以及超辐射发射极耦合的影响
7. Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy [O] . T Mano, M Abbarchi, T Kuroda, 2009

机译：单张GaAs自组装量子点的超窄排放由液滴外延生长

Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer

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