Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

Nguyen H.P.T.; Cui K.; Zhang S.; Fathololoumi S.; Mi Z.

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Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

机译：硅上的全色InGaN / GaN线中发光二极管

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We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (>20%) and no apparent efficiency droop for current densities up to ～ 200Acm- 2.

机译：我们报告了新型纳米线发光二极管（LED）的成就，该二极管结合了直接在Si（111）衬底上生长的InGaN / GaN线中点状纳米尺度异质结构。通过改变点组成，可以在几乎整个可见波长范围内实现强发射。此外，我们已经通过在单个外延生长步骤中控制点中的铟含量来证明了无磷白光LED。这样的器件可以表现出相对较高的内部量子效率（> 20％），并且对于高达〜200Acm-2的电流密度没有明显的效率下降。

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《Nanotechnology》 |2011年第44期|共5页
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Nguyen H.P.T.; Cui K.; Zhang S.; Fathololoumi S.; Mi Z.;
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1. Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon [J] . Nguyen H.P.T., Cui K., Zhang S., Nanotechnology . 2011,第44期

机译：硅上的全色InGaN / GaN线中发光二极管
2. Phosphor-Free InGaN/GaN Dot-in-a-Wire White Light-Emitting Diodes on Copper Substrates [J] . HIEU PHAM TRUNG NGUYEN, QI WANG, ZETIAN MI Journal of Electronic Materials . 2014,第4期

机译：铜基板上的无磷InGaN / GaN线中白光发光二极管
3. Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes [J] . M Djavid, H P T Nguyen, S Zhang, Semiconductor science and technology . 2014,第8期

机译：隧道注入InGaN / GaN线中白光发光二极管
4. Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light emitting diodes [C] . Zetian Mi, Hieu Pham Trung Nguyen, Shaofei Zhang, Conference on light-emitting diodes: Materials, devices, and applications for solid state lighting XVIII . 2014

机译：无磷InGaN / GaN / AlGaN核壳线中点状白色发光二极管
5. Investigation and Analysis of Thermal Performance of InGaN/GaN Light Emitting Diodes [D] . Das, Shiladitya. 2017

机译：InGaN / GaN发光二极管热性能的调查分析
6. Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate [O] . Changda Zheng, Li Wang, Chunlan Mo, 2013

机译：等温GaN覆盖层对硅衬底上绿色发光二极管的InGaN / GaN多量子阱的影响
7. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon [O] . Guo Wei, Banerjee Animesh, Bhattacharya Pallab K., 2011

机译：（001）硅上的InGaN / GaN纳米线圆盘白光发光二极管

Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

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