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The effect of random copolymer on the characteristic dimensions of cylinder-forming PS-b-PMMA thin films

机译:无规共聚物对圆柱型PS-b-PMMA薄膜特征尺寸的影响

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The block copolymer self-assembly approach has received great attention in recent years as a possible way to overcome the limits of conventional lithography and to fabricate sub-22nm structures. At this level, precise nanometric control is crucial for technological applications and the search for a flexible and reproducible protocol is a great challenge. The polystyrene-b-poly(methylmethacrylate) (PS-b-PMMA) system, with a styrene fraction of 0.71, spontaneously separates into a periodic array of hexagonally packed PMMA cylinders embedded in a matrix of PS and, under suitable processing conditions, this is perpendicularly oriented with respect to the underlying substrate. The selective removal of the PMMA allows us to obtain a nanoporous PS matrix with well-defined pore dimensions. Perpendicular orientation of the PMMA cylinders requires surface neutralization by means of a suitable PS-r-PMMA random copolymer. The choice of the random copolymer is not trivial, because different PS-r-PMMA copolymers strongly affect the characteristics of the PS-b-PMMA film deposited on it. In this paper the effects of the selected PS-r-PMMA on the arrangement as well as on the peculiar dimensions (pore diameter, pore to pore distance) of the final nanoporous PS thin film are studied. Reliable protocols for the fabrication of a disposable polymeric mask are proposed in view of its application in advanced lithographic processes.
机译:近年来,嵌段共聚物的自组装方法作为克服常规光刻技术的局限性和制造22nm以下亚微米结构的一种可能方法而受到了极大的关注。在这个水平上,精确的纳米控制对于技术应用至关重要,而寻找一种灵活且可复制的协议是一个巨大的挑战。苯乙烯分数为0.71的聚苯乙烯-b-聚(甲基丙烯酸甲酯)(PS-b-PMMA)系统自发地分成嵌在PS基质中的六方填充PMMA圆柱体的周期性阵列,并在合适的加工条件下将其相对于下面的衬底垂直取向。选择性去除PMMA使我们能够获得具有明确定义的孔径的纳米多孔PS基质。 PMMA圆柱体的垂直取向需要通过合适的PS-r-PMMA无规共聚物进行表面中和。选择无规共聚物并非无关紧要,因为不同的PS-r-PMMA共聚物会强烈影响沉积在其上的PS-b-PMMA膜的特性。在本文中,研究了选择的PS-r-PMMA对最终纳米多孔PS薄膜的排列以及特殊尺寸(孔直径,孔与孔之间的距离)的影响。考虑到其在先进的光刻工艺中的应用,提出了制造一次性聚合物掩模的可靠方案。

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