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Large-scale synthesis and photoluminescence properties of SiC/SiOx nanocables

机译:SiC / SiOx纳米电缆的大规模合成和光致发光性能

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By using a simple and low-cost arc-discharge method in deionized water, high purity SiC/SiOx nanocables have been synthesized in large-scale. The synthesized SiC/SiOx nanocables consist of an uniform cubic beta-SiC core and an amorphous silicon oxide shell. They are about several hundred nanometres to several microns in length and the smallest average diameter of the beta-SiC core is only about 5 nm, which may be attributed to the arc-discharge in deionized water approach and to the constraint of the outer sheath. The diameters of the as-grown nanocables can be controlled through adjusting the processing parameters. The SiC/SiOx nanocables emit stable violet-blue light at wavelengths of about 315 nm and 360-400 nm. Compared to the reported results in beta-SiC nanowires or nanocables, the photoluminescence of the synthesized nanocables shows significant blueshift, which is resulted from the small diameter of the beta-SiC core. The photoluminescence intensity can be enhanced by annealing the as-prepared SiC/SiOx nanocables.
机译:通过在去离子水中使用简单且低成本的电弧放电方法,已大规模合成了高纯度SiC / SiOx纳米电缆。合成的SiC / SiOx纳米电缆由均匀的立方β-SiC核和非晶氧化硅壳组成。它们的长度约为几百纳米到几微米,β-SiC核的最小平均直径仅为约5 nm,这可能归因于去离子水方法中的电弧放电和外护套的约束。可以通过调节加工参数来控制生长的纳米电缆的直径。 SiC / SiOx纳米电缆发出稳定的紫蓝色光,波长约为315 nm和360-400 nm。与报告的β-SiC纳米线或纳米电缆的结果相比,合成的纳米电缆的光致发光显示出显着的蓝移,这是由β-SiC核的小直径引起的。可以通过退火制备的SiC / SiOx纳米电缆来增强光致发光强度。

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