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A study of graphene films synthesized on nickel substrates: Existence and origin of small-base-area peaks

机译：在镍基底上合成的石墨烯薄膜的研究：小基峰的存在和起源

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Large-area graphene films, synthesized by the chemical vapor deposition (CVD) method, have the potential to be used as electrodes. However, the electrical properties of CVD-synthesized graphene films fall short of the best results obtained for graphene films prepared by other methods. Therefore, it is important to understand the reason why these electrical properties are inferior to improve the applicability of CVD-grown graphene films. Here, we show that CVD-grown graphene films on nickel substrates contain many small-base-area (SBA) peaks that scatter conducting electrons, thereby decreasing the Hall mobility of charges in the films. These SBA peaks were induced by small peaks on the nickel surface and are likely composed of amorphous carbon. The formation of these SBA peaks on graphene films was successfully suppressed by controlling the surface morphology of the nickel substrate. These findings may be useful for the development of a CVD synthesis method that is capable of producing better quality graphene films with large areas.
机译：通过化学气相沉积（CVD）法合成的大面积石墨烯膜具有用作电极的潜力。但是，CVD合成的石墨烯薄膜的电性能达不到通过其他方法制备的石墨烯薄膜获得的最佳结果。因此，重要的是要理解为什么这些电性能不如改善CVD生长的石墨烯膜的适用性的原因。在这里，我们表明，在镍基板上的CVD生长的石墨烯薄膜包含许多散射导电电子的小基区（SBA）峰，从而降低了薄膜中电荷的霍尔迁移率。这些SBA峰是由镍表面的小峰引起的，很可能由无定形碳组成。通过控制镍基板的表面形态，成功抑制了石墨烯膜上这些SBA峰的形成。这些发现对于开发能够产生大面积高质量石墨烯薄膜的CVD合成方法可能有用。

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