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Transport behavior and negative magnetoresistance in chemically reduced graphene oxide nanofilms

机译：化学还原氧化石墨烯纳米膜的传输行为和负磁阻

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摘要

The electron transport behavior in chemically reduced graphene oxide (rGO) sheets with different thicknesses of 2, 3, and 5nm was investigated. The four-probe method for the sheet resistance (R_S) measurement on the intensively reduced graphene oxide samples indicates an Arrhenius characteristic of the electron transport at zero magnetic field B = 0, consistent with previous experimental results on well-reduced GO samples. The anticipated variable range hopping (VRH) transport of electrons in a two-dimensional electron system at low temperatures was not observed. The measured R_S of the rGO samples are below 52kΩ/square at room temperature. With the application of a magnetic field up to 4T, negative magnetoresistance in the Mott VRH regime was observed. The magnetotransport features support a model based on the spin-coupling effect from the vacancy-induced midgap states that facilitate the Mott VRH conduction in the presence of an external magnetic field.
机译：研究了在具有2、3和5nm不同厚度的化学还原氧化石墨烯（rGO）片中的电子传输行为。在强还原性氧化石墨烯样品上测量薄层电阻（R_S）的四探针方法表明，零磁场B = 0时电子传输的阿累尼乌斯特性，与先前对还原良好的GO样品的实验结果一致。没有观察到在低温下二维电子系统中电子的预期变程跳跃（VRH）传输。室温下，rGO样品的测量R_S低于52kΩ/平方。施加高达4T的磁场后，在Mott VRH模式下观察到负磁阻。磁输运特征支持基于空位诱导的中间能隙状态的自旋耦合效应的模型，该模型能在存在外部磁场的情况下促进Mott VRH的传导。

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