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Luminescent nanostructures based on Ge nanoparticles embedded in an oxide matrix

机译：基于嵌入氧化物基体中的Ge纳米颗粒的发光纳米结构

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摘要

Ge nanoparticles embedded in an oxide matrix have been obtained by (a) steam thermal oxidation at 650° C of polycrystalline SiGe layers and (b) deposition of discontinuous Ge films/SiO2 multilayers by low pressure chemical vapour deposition at 390° C and thermal annealing at 700° C. These two approaches are compared in terms of the composition and size of the nanoparticles and the luminescence properties of the structures. In both cases violet luminescence peaking at 3.1 eV is detected. The origin of this emission in both types of structures is the same and it will be related to defects at the interface between the nanocrystalline Ge and the dielectric matrix. Thinking about future applications, the second approach is found to be much more attractive from the technological point of view, even considering that the first one gives a more intense luminescence emission, since the structure can be fabricated in a single-run process; these structures are currently being investigated to improve their luminescence emission.
机译：通过（a）在650°C下进行蒸汽热氧化，可以获得嵌入氧化物基体中的Ge纳米颗粒。 C的多晶SiGe层和（b）通过在390℃下的低压化学气相沉积法沉积不连续的Ge膜/ SiO 2多层膜; C和在700℃进行热退火; C.就纳米颗粒的组成和尺寸以及结构的发光性质而言，比较了这两种方法。在这两种情况下，均检测到紫光发光在3.1 eV达到峰值。两种类型的结构中这种发射的起源都是相同的，并且将与纳米晶Ge和介电基体之间的界面处的缺陷有关。考虑到未来的应用，从技术的角度来看，第二种方法更具吸引力，即使考虑到第一种方法可以发出更强烈的发光，这是因为该结构可以在单一过程中制造。目前正在研究这些结构以改善其发光发射。

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