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The effects of gas exposure and UV illumination on field emission from individual ZnO nanowires

机译:气体暴露和紫外线照射对单个ZnO纳米线场发射的影响

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摘要

Individual ZnO nanowires grown on a Pt tip were exposed to O_2 and H_2 in the course of field emission. O_2 exposure was found to suppress field emission, while H_2 reduced the turn-on voltage and increased the emission current. Upon UV (250-400 nm) illumination, the emission current increased almost immediately by about two orders of magnitude, but takes a much longer period, depending on the vacuum level, to fall to its original value following illumination. These phenomena can be accounted for with reference to mechanisms responsible for the sensitivity of metal oxides to oxidizing and reducing gases.
机译:在场发射过程中,在Pt尖端生长的单个ZnO纳米线暴露于O_2和H_2。发现O_2暴露可以抑制场发射,而H_2可以降低导通电压并增加发射电流。在紫外线(250-400 nm)照射下,发射电流几乎立即增加了大约两个数量级,但是根据真空度的不同,发射电流要在照射后降至其原始值要花费更长的时间。这些现象可以参考引起金属氧化物对氧化和还原气体敏感的机理来解释。

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