The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition

?ervenka J.; Ledinsk? M.; Stuchlík J.; Stuchlíková H.; Bakardjieva S.; Hru?ka K.; Fejfar A.; Ko?ka J.

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The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition

机译：等离子增强化学气相沉积法制备Si纳米针的结构和生长机理

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Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles on glass at temperatures as low as 250°C. High resolution electron microscopy and micro-Raman spectroscopy have been used to study the crystal structure and the growth mechanism of individual Si nanoneedles. The H_2 dilution of the SiH_4 plasma working gas has caused the formation of extremely sharp nanoneedle tips that in some cases do not contain a catalytic particle at the end.

机译：硅纳米线和纳米针对纳米电子和纳米光子学中的许多设备应用显示出希望，但仍然存在的挑战是在低温下以低成本材料生长它们。在这里，我们介绍了在低至250°C的温度下在玻璃上的晶体/非晶Si纳米针的等离子体增强化学气相沉积。高分辨率电子显微镜和显微拉曼光谱已用于研究单个Si纳米针的晶体结构和生长机理。 SiH_4等离子体工作气体的H_2稀释导致形成了非常尖锐的纳米针头，在某些情况下，其末端不包含催化颗粒。

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《Nanotechnology》 |2010年第41期|共7页
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?ervenka J.; Ledinsk? M.; Stuchlík J.; Stuchlíková H.; Bakardjieva S.; Hru?ka K.; Fejfar A.; Ko?ka J.;
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3. The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition [J] . ?ervenka J., Ledinsk? M., Stuchlík J., Nanotechnology . 2010,第41期

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The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition

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