• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications
【24h】

Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

机译：多级非易失性存储应用中掺Cu HfO2薄膜的电阻转换研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper, the resistive switching characteristics in a Cu/HfO2:Cu/Pt sandwiched structure is investigated for multilevel non-volatile memory applications. The device shows excellent resistive switching performance, including good endurance, long retention time, fast operation speed and a large storage window (R-OFF/R-ON > 10(7)). Based on the temperature-dependent test results, the formation of Cu conducting filaments is believed to be the reason for the resistance switching from the OFF state to the ON state. By integrating the resistive switching mechanism study and the device fabrication, different resistance values are achieved using different compliance currents in the program process. These resistance values can be easily distinguished in a large temperature range, and can be maintained over 10 years by extrapolating retention data at room temperature. The integrated experiment and mechanism studies set up the foundation for the development of high-performance multilevel RRAM.
机译：本文针对多层非易失性存储器应用，研究了Cu / HfO2：Cu / Pt夹层结构中的电阻开关特性。该器件具有出色的电阻开关性能，包括良好的耐久性，较长的保留时间，快速的操作速度和较大的存储窗口（R-OFF / R-ON> 10（7））。基于温度相关的测试结果，据信形成铜导电丝是电阻从截止状态切换到导通状态的原因。通过将电阻开关机制研究与器件制造集成在一起，在编程过程中使用不同的顺应电流可获得不同的电阻值。这些电阻值可以在较大的温度范围内轻松区分，并且可以通过推断室温下的保留数据保持10年以上。集成的实验和机制研究为高性能多层RRAM的开发奠定了基础。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号