Precise Ge quantum dot placement for quantum tunneling devices

Chen KH; Chien CY; Li PW

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Precise Ge quantum dot placement for quantum tunneling devices

机译：用于量子隧穿设备的精确Ge量子点放置

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This study demonstrates the precise placement of Ge quantum dots (QDs) in an SiO2 or Si3N4 matrix in a self-organized manner by thermally oxidizing SiGe in nanostructures. The effectiveness of this method is shown by a variety of geometries including nanotrenches, nanorods and polygonal nanocavities. Modulating the structural geometry and peripheral spacer materials effectively places a single Ge QD in the center of an oxidized SiGe nanostructure or individual QDs at the corners (edges). This study also reports the fabrication of Ge QD single-electron devices that exhibit clear Coulomb staircases and differential conductance oscillations at room temperature.

机译：这项研究通过热氧化纳米结构中的SiGe，以自组织的方式展示了Ge量子点（QD）在SiO2或Si3N4基质中的精确放置。这种方法的有效性通过各种几何形状（包括纳米沟槽，纳米棒和多边形纳米腔）得以展示。调节结构的几何形状和外围间隔材料可有效地将单个Ge QD放置在氧化的SiGe纳米结构的中心，或将单个QD放置在拐角（边缘）。这项研究还报告了Ge QD单电子器件的制造，该器件在室温下表现出清晰的库仑阶梯和微分的电导振荡。

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来源
《Nanotechnology》 |2010年第5期|共9页
作者
Chen KH; Chien CY; Li PW;
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正文语种 eng
中图分类特种结构材料;
关键词
PATTERN-DEPENDENT OXIDATION; ROOM-TEMPERATURE; THERMAL-OXIDATION; ON-INSULATOR; SILICON; NANOSTRUCTURES; TRANSISTORS;

机译：取决于图案的氧化;室温;热氧化;绝缘子;硅;纳米结构;晶体管;

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专利

1. Precise Ge quantum dot placement for quantum tunneling devices [J] . Chen KH, Chien CY, Li PW Nanotechnology . 2010,第5期

机译：用于量子隧穿设备的精确Ge量子点放置
2. Single Germanium Quantum-dot Placement Along With Self-Aligned Electrodes for Effective Management of Single Charge Tunneling [J] . Chen I.-H., Chen K.-H., Lai W.-T., Electron Devices, IEEE Transactions on . 2012,第12期

机译：单锗量子点放置以及自对准电极可有效管理单电荷隧穿
3. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots [J] . Vaibhav Varade, Amardeep M. Jagtap, P. Anjaneyulu, Journal of Applied Physics . 2015,第21期

机译：有机半导体和碲化镉量子点混合复合器件中的高效电荷转移和场致隧道传输
4. CMOS-Compatible Precise Placement of Ge Quantum Dots for Nanoelectronic, Nanophotonic, and Energy Conversion Devices [C] . I.-H. Chen, K.-H. Chen, C.-C. Wang, Low-dimensional nanoscale electronic and photonic devices 5 -and-state-of-the-art program on compound semiconductors 54 (SOTAPOCS 54) . 2012

机译：适用于纳米电子，纳米光子和能量转换器件的CMOS兼容的Ge量子点的精确放置
5. Quantum dot heterojunction solar cells: The mechanism of device operation and impacts of quantum dot oxidation. [D] . Ihly, Rachelle. 2014

机译：量子点异质结太阳能电池：器件运行的机制以及量子点氧化的影响。
6. Band to Band Tunneling at the Zinc Oxide (ZnO) and Lead Selenide (PbSe) Quantum Dot Contact; Interfacial Charge Transfer at a ZnO/PbSe/ZnO Probe Device [O] . Minkyong Kim, Chang-Yeol Han, Heesun Yang, 2019

机译：氧化锌（ZnO）和硒化铅（PbSe）量子点接触处的带间隧穿； ZnO / PbSe / ZnO探针装置上的界面电荷转移
7. Graphene Quantum Dots: Molecularly Designed, Nitrogen-Functionalized Graphene Quantum Dots for Optoelectronic Devices (Adv. Mater. 23/2016) [O] . Hiroyuki Tetsuka, Akihiro Nagoya, Takanori Fukusumi, 2016

机译：石墨烯量子点：用于光电器件的分子设计，氮官能化石墨烯量子点（ADV。Mater。23/2016）
8. Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices [R] . Petroff, P. M. 2003

机译：用于量子点器件室温操作的GaN / alN自组装量子点的研制

Precise Ge quantum dot placement for quantum tunneling devices

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