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Ion-beam nano-patterning by using porous anodic alumina as a mask

机译：以多孔阳极氧化铝为掩模的离子束纳米构图

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摘要

Anodized aluminium oxide (AAO) with self-organized and ordered nano-hole arrays may be a good candidate for an irradiation mask to modify the properties of a nano-scale region. In order to use AAO as a mask for ion beam patterning, the ion beam transmittance of AAO should first be tested. In an AAO with a high aspect ratio (about 100), anodized from Al bulk foil, the ion beam transmittance was extremely low. However, when AAO with low aspect ratio (about 5), fabricated with thin film Al on SiO2, was irradiated with 80 keV Co ions, the Co ion transmittance was enormously improved. After selective etching of the unirradiated region, ion beam patterned 80 nm SiO2 dot arrays have been fabricated. This shows a potential of AAO with a low aspect ratio for an ion beam patterning nano-mask. In order to demonstrate the ion beam nano-patterning, magnetic nano-patterning was performed. A Co/Pt multilayer film with a perpendicular magnetic anisotropy was ion irradiated through an AAO mask with a low aspect ratio, 460 nm height and 50 nm diameter, and the magnetic properties were investigated by MOKE. The formation of a magnetic nano-pattern was confirmed by MFM.
机译：具有自组织和有序的纳米孔阵列的阳极氧化铝（AAO）可能是辐照掩模修改纳米级区域特性的良好选择。为了将AAO用作离子束构图的掩模，应首先测试AAO的离子束透射率。在由Al块状箔阳极化的高纵横比（约100）的AAO中，离子束透射率极低。然而，当用80keV Co离子辐照在SiO2上用薄膜Al制成的低深宽比（约5）的AAO时，Co离子的透射率大大提高。在对未辐照区域进行选择性蚀刻之后，已制作出了离子束图案化的80 nm SiO2点阵列。这显示出用于离子束图案化纳米掩模的具有低纵横比的AAO的潜力。为了证明离子束纳米图案化，进行了磁性纳米图案化。通过纵横比低，高度为460 nm，直径为50 nm的AAO掩模对具有垂直磁各向异性的Co / Pt多层膜进行离子辐照，并通过MOKE研究了磁性。通过MFM证实了磁性纳米图案的形成。

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