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Electrostatically telescoping nanotube nonvolatile memory device

机译：静电伸缩纳米管非易失性存储器件

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摘要

We propose a nonvolatile memory based on carbon nanotubes (CNTs) serving as the key building blocks for molecular-scale computers and investigate the dynamic operations of a double-walled CNT memory element by classical molecular dynamics simulations. The localized potential energy wells achieved from both the interwall van der Waals energy and CNT-metal binding energy make the bistability of the CNT positions and the electrostatic attractive forces induced by the voltage differences lead to the reversibility of this CNT memory. The material for the electrodes should be carefully chosen to achieve the nonvolatility of this memory. The kinetic energy of the CNT shuttle experiences several rebounds induced by the collisions of the CNT onto the metal electrodes, and this is critically important to the performance of such an electrostatically telescoping CNT memory because the collision time is sufficiently long to cause a delay of the state transition.
机译：我们提出了一种基于碳纳米管（CNT）的非易失性存储器，作为分子规模计算机的关键构建块，并通过经典的分子动力学模拟研究了双壁CNT存储器元件的动态操作。由壁间范德华能和CNT-金属结合能获得的局部势能阱使CNT的双稳态性和由电压差引起的静电引力导致该CNT记忆的可逆性。电极的材料应仔细选择以实现该存储器的非易失性。 CNT穿梭的动能会经历CNT碰撞金属电极而引起的几次反弹，这对于这种静电伸缩CNT存储器的性能至关重要，因为碰撞时间足够长，会导致延迟。状态转换。

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