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首页> 外文期刊>Nature photonics >A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses
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A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses

机译：发射60 fs脉冲的无源锁模外腔半导体激光器

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摘要

Optical pulses with durations of a few tens of femtoseconds are used to drive applications ranging from attoscience to metrology(1), but femtosecond lasers remain bulky and expensive items based on vibronic crystal or ytterbium-doped silica fibre gain media. Although, in principle, bandgap-engineered quantum-confined semiconductor materials have significant advantages in terms of their gain bandwidth and spectral versatility, semiconductor lasers have not, to date, been capable of generating comparably short pulses. Here, we describe an optically pumped InGaAs/GaAs quantum-well laser that is passively mode-locked using an intracavity semiconductor saturable absorber mirror(2) that emits 60-fs pulses at 1,037 nm with an optical spectrum bandwidth of 20 nm (full-width at half-maximum). In this laser, fast optical Stark self-absorption modulation and strong gain saturation combine to shape pulses on the timescale of carrier-carrier scattering. The cavity contains a stable group of circulating pulses, regularly spaced at an interval fixed by the time over which the saturated gain recovers.
机译：持续时间为几十飞秒的光脉冲被用于驱动从原子科学到计量学的各种应用（1），但是飞秒激光仍然是体积大且昂贵的产品，其基于振动晶体或掺silica石英光纤增益介质。尽管从原理上讲，带隙设计的量子受限半导体材料在增益带宽和光谱通用性方面具有显着优势，但迄今为止，半导体激光器尚无法产生相对较短的脉冲。在这里，我们描述了一种光泵浦InGaAs / GaAs量子阱激光器，该激光器使用腔内半导体可饱和吸收镜（2）进行被动锁模，该镜在1,037 nm处发射60-fs脉冲，光谱带宽为20 nm（全最大宽度的一半）。在这种激光器中，快速的光学斯塔克自吸收调制和强大的增益饱和相结合，在载波-载波散射的时间尺度上形成脉冲。谐振腔包含一组稳定的循环脉冲，它们之间的间隔是固定的，该间隔由饱和增益恢复的时间固定。

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