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首页> 外文期刊>Materials Science Research International >Molecular dynamics study of the stress distribution near a crack tip in β-silicon nitride
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Molecular dynamics study of the stress distribution near a crack tip in β-silicon nitride

机译：β-氮化硅裂纹尖端附近应力分布的分子动力学研究

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摘要

The stress distribution near a crack tip and crack propagation in a β-silicon nitride crystal are investigated by molecular dynamics (MD) simulations. A crack propagates when K{sub}I is greater than 0.7 MPa{the square root of}m. On the other hand, it shrinks when K{sub}I is smaller than 0.65 MPa{the square root of}m, indicating that the K{sub}(IC) value is about 0.7 MPa{the square root of}m. This value agrees well with that calculated using Griffith's theory. The stress distribution near the crack tip for K{sub}I is 0.7 MPa{the square root of}m, i.e. the case when the crack stops, is calculated from the MD results, assuming that the stress is the average of the atomic stresses. The calculated stress distribution is in good agreement with the linear elastic solution.
机译：通过分子动力学（MD）模拟研究了β-氮化硅晶体中裂纹尖端附近的应力分布和裂纹扩展。当K {I}大于0.7 MPa {m的平方根}时，裂纹扩展。另一方面，当K {I}小于0.65MPa {m的平方根}时，收缩，表明K {sub}（IC）值约为0.7MPa {m的平方根。该值与使用格里菲思理论计算的值非常吻合。假设应力为原子应力的平均值，则根据MD结果计算出K {sub} I裂纹尖端附近的应力分布为0.7 MPa {平方根} m，即裂纹停止的情况。 。计算得出的应力分布与线性弹性解非常吻合。

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