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Voltage-Sensing Domain of Voltage-Gated Proton Channel Hv1 Shares Mechanism of Block with Pore Domains

机译:电压门控质子通道Hv1的电压感应域与孔域嵌段共享机制

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摘要

Voltage-gated sodium, potassium, and calcium channels are made of a pore domain (PD) controlled by four voltage-sensing domains (VSDs). The PD contains the ion permeation pathway and the activation gate located on the intracellular side of the membrane. A large number of small molecules are known to inhibit the PD by acting as open channel blockers. The voltage-gated proton channel Hv1 is made of two VSDs and lacks the PD. The location of the activation gate in the VSD is unknown and open channel blockers for VSDs have not yet been identified. Here, we describe a class of small molecules which act as open channel blockers on the Hv1 VSD and find that a highly conserved phenylalanine in the charge transfer center of the VSD plays a key role in blocker binding. We then use one of the blockers to show that Hv1 contains two intracellular and allosterically coupled gates. Hong et al. identify compounds that inhibit Hv1, a proton channel involved in brain damage during ischemic stroke, in a way that resembles the block of potassium channels, an unexpected result given the lack of a pore domain in Hv1.
机译:电压门控的钠,钾和钙通道由受四个电压传感域(VSD)控制的孔域(PD)组成。 PD包含离子渗透途径和位于膜的细胞内侧的激活门。已知有许多小分子通过充当开放通道阻滞剂来抑制PD。电压门控质子通道Hv1由两个VSD组成,没有PD。 VSD中激活门的位置是未知的,并且尚未确定VSD的开放通道阻止程序。在这里,我们描述了一类小分子,它们充当Hv1 VSD上的开放通道阻滞剂,并发现VSD电荷转移中心中高度保守的苯丙氨酸在阻滞剂结合中起关键作用。然后,我们使用一种阻滞剂来显示Hv1包含两个细胞内和变构偶联的门。 Hong等。以类似于钾通道阻滞的方式,鉴定出抑制Hv1的化合物,Hv1是缺血性中风期间参与脑损伤的质子通道,由于Hv1中没有孔结构域,因此出乎意料。

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