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机译:
Arizona State Univ;
Air Force Res Lab;
机译:Effect of growth interruption time on the quality of InAs/GaSb type-II superlattice grown by molecular beam epitaxy
机译:Optically pumped laser oscillation at 3.9 mgr;m from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb
机译:Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy
机译:InAs / GaSb和InAs / InAsSb超晶格的拉曼光谱和光致发光研究
机译:InAs / GaSb和基于InAs / InAsSb II型超晶格的红外器件的暗电流抑制,光学性能改进和高频操作
机译:mn注入和室温下的室温铁磁性行为 通过molecular Beam Epitaxy沉积的后退火Inas层
机译:as(2)与as(4)对Inas / Gasb异质结构的影响:as-for-sb交换和膜稳定性;杂志文章