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首页> 外文期刊>Materials Technology >Comparative study of ZnTe thin films prepared using close space sublimation (CSS) and electron beam evaporation (EBE) thin film fabrication techniques for optoelectronic applications
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Comparative study of ZnTe thin films prepared using close space sublimation (CSS) and electron beam evaporation (EBE) thin film fabrication techniques for optoelectronic applications

机译：使用近空间升华（CSS）和电子束蒸发（EBE）薄膜制造技术制备的ZnTe薄膜的光电应用比较研究

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摘要

ZnTe thin films were deposited onto soda lime glass substrates by the close space sublimation (CSS) and electron beam evaporation (EBE) techniques under vacuum (as deposited, annealed at 300 °C and Ag doped for 10 min). Structural, morphological, optical and electrical properties of ZnTe films were studied before and after doping. The ZnTe thin films fabricated by EBE technique showed improvement in microstructure, morphology, crystalline orientation and physical parameters such as porosity and density as compared to CSS fabricated thin films. The highest density with very small porosity is observed in EBE fabricated films. The improvement in electrical parameters such as resistivity, mobility, sheet concentration, type of semiconductor (p or n type), bulk concentration and magnetoresistance were observed in EBE fabricated thin films. The highest decrease in electrical resistivity (8.34×10~2 Ω cm) was observed by incorporating Ag dopant via EBE technique. The main purpose of this was a comparative study between EBE and CSS techniques and an improvement in the electrical and optical properties such as electrical conductivity, mobility, sheet resistance/concentration and the band gap of the fabricated thin films. The doping of Ag was performed to observe their effects on morphology, structure, electrical and photovoltaic properties of the as deposited thin films. It was observed that electrical and optical properties of the fabricated films enhanced with dopant and annealing temperature.
机译：通过近空间升华（CSS）和电子束蒸发（EBE）技术在真空下将ZnTe薄膜沉积在钠钙玻璃基板上（沉积后，在300°C退火并掺杂Ag 10分钟）。研究了掺杂前后ZnTe薄膜的结构，形貌，光学和电学性质。与CSS制备的薄膜相比，通过EBE技术制备的ZnTe薄膜在微观结构，形态，晶体取向和物理参数（例如孔隙率和密度）方面有所改善。在EBE制成的薄膜中观察到最高的密度和很小的孔隙率。在EBE制成的薄膜中观察到电参数的改善，例如电阻率，迁移率，薄层浓度，半导体类型（p或n型），体积浓度和磁阻。通过EBE技术掺入Ag掺杂剂可以观察到电阻率的最大降低（8.34×10〜2Ωcm）。其主要目的是对EBE技术和CSS技术进行比较研究，并改善电学和光学性能，例如电导率，迁移率，薄层电阻/浓度和所制造薄膜的带隙。进行Ag的掺杂以观察其对所沉积的薄膜的形态，结构，电和光伏性质的影响。观察到，所制造的膜的电学和光学性质随掺杂剂和退火温度而增强。

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