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首页> 外文期刊>New Journal of Chemistry >lndolo[3,2-b]carbazole and benzofurazan based narrow band-gap polymers for photovoltaic cells
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lndolo[3,2-b]carbazole and benzofurazan based narrow band-gap polymers for photovoltaic cells

机译：苯并[3,2-b]咔唑和苯并呋喃型窄带隙聚合物用于光伏电池

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摘要

Two indolo[3,2-b]carbazole and 5,6-bis(octyloxy)benzofurazan based narrow band-gap polymers PICzODTBF and PICzHDDTBF with linear and branched side chains respectively were synthesized, and their optical, electrochemical and photovoltaic properties were characterized. The number-averaged molecular weight (M_n) values of PICzODTBF and PICzHDDTBF were 8600 and 21400 with polydispersity index (PDI) values of 1.97 and 2.43, respectively. The absorption spectra for the films showed that the peaks were located at 405 and 571 nm for PICzODTBF, and 396 and 531 nm for PICzHDDTBF, accompanying optical band gaps of 1.90 and 2.05 eV, respectively. Compared with PICzHDDTBF, the absorption of PICzODTBF was obviously red shifted resulting from its linear side chains leading to better π-π stacking between polymer chains. Through the electrochemical characterization, the HOMO energy levels were found to be -5.02 and -5.28 eV, with LUMO energy levels of -3.09 and -3.08 eV for PICzODTBF and PICzHDDTBF, respectively. The photovoltaic devices were fabricated with the structure ITO/PEB'OT:PSS/polymer:PC_(71)BM/PFN/Al. For PICzODTBF, the short circuit current density (J_(sc)), open circuit voltage (V_(oc)), fill factor (FF) and power conversion efficiency (PCE) were 4.81 mA cm~(-2), 0.80 V, 57% and 3.23%, respectively. PICzHDDTBF had J_(sc), V_(oc), FF and PCE values of 4.61 mA cm~(-2), 0.95 V, 48% and 3.13%, respectively.
机译：分别合成了两种具有线性和支化侧链的吲哚并[3,2-b]咔唑和5,6-双（辛氧基）苯并呋喃基窄带隙聚合物PICzODTBF和PICzHDDTBF，并对其光学，电化学和光电性能进行了表征。 PICzODTBF和PICzHDDTBF的数均分子量（M_n）值分别为8600和21400，多分散指数（PDI）值分别为1.97和2.43。薄膜的吸收光谱表明，峰值分别位于PICzODTBF的405和571 nm，以及PICzHDDTBF的396和531 nm，分别具有1.90和2.05 eV的光学带隙。与PICzHDDTBF相比，由于其线性侧链，PICzODTBF的吸收明显发生了红移，从而导致聚合物链之间更好的π-π堆积。通过电化学表征，发现HOMO能级为-5.02和-5.28 eV，而PICzODTBF和PICzHDDTBF的LUMO能级分别为-3.09和-3.08 eV。用结构ITO / PEB'OT：PSS /聚合物：PC_（71）BM / PFN / Al制造光电器件。对于PICzODTBF，短路电流密度（J_（sc）），开路电压（V_（oc）），填充系数（FF）和功率转换效率（PCE）分别为4.81 mA cm〜（-2），0.80 V，分别为57％和3.23％。 PICzHDDTBF的J_（sc），V_（oc），FF和PCE值分别为4.61 mA cm〜（-2），0.95 V，48％和3.13％。

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