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Vysotskite structured photoactive palladium sulphide thin films from dithiocarbamate derivatives

机译:二硫代氨基甲酸酯衍生物的维索石结构光敏硫化钯薄膜

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A series of palladium(II) dithiocarbamate complexes [Pd(S2CNRR')2]·n(py) [where py = pyridine; RR' = Bz, n = 1 (1); Cy, n = 1 (2); "Hex, n = 0 (3) and MeCy, n = 0 (4)] have been synthesized and characterized using various physicochemical techniques and their single crystal structures have been established. The decomposition modes and potential of the complexes as single source precursors (SSPs) for the development of palladium sulphide (PdS) thin films were investigated by thermogravimetric and derivative thermogravimetric (TGA/DTG) analyses. The PdS thin films were deposited on FTO conducting glass substrates at 400, 450 and 500 °C by the aerosol-assisted chemical vapour deposition (AACVD) technique and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) reveal that the deposit has a tetragonal structure with a 1:1 ratio of Pd: S. The shape and size of PdS crystallites and the texture of films depend on the deposition temperatures and the precursor type used. The direct band gap energy of 1.56 eV was estimated from UV-Vis spectroscopy of the PdS films fabricated from precursor (2) at 450 °C. The photoelectrochemical (PEC) properties of PdS films were studied by recording the current-voltage plots under alternating dark and illumination conditions. To the best of our knowledge, this is the first demonstration of PEC studies of photoactive PdS thin films fabricated using the AACVD technique using palladium(II) dithiocarbamate complexes as precursors.
机译:一系列二硫代氨基甲酸钯(II)络合物[Pd(S2CNRR')2]·n(py)[其中py =吡啶; RR'= Bz,n = 1(1); Cy,n = 1(2); “已用多种物理化学方法合成并表征了“ Hex,n = 0(3)和MeCy,n = 0(4)],并确定了它们的单晶结构。该配合物作为单源前体的分解模式和潜力(通过热重分析和导数热重分析(TGA / DTG)分析了用于开发硫化钯(PdS)薄膜的SSPs,并通过气溶胶法将PdS薄膜沉积在FTO导电玻璃基板上,温度分别为400、450和500°C。辅助化学气相沉积(AACVD)技术并通过X射线衍射(XRD),扫描电子显微镜(SEM),能量色散X射线分析(EDX)进行表征,发现该沉积物具有四方结构,其比例为1:1。 PdS微晶的形状和尺寸以及薄膜的质感取决于沉积温度和所用的前驱体类型,通过PdS fil的UV-Vis光谱估计带隙能为1.56 eV。在450°C下由前体(2)制造的毫秒数。通过在交替的黑暗和光照条件下记录电流-电压图,研究了PdS膜的光电化学(PEC)特性。据我们所知,这是使用AACVD技术以二硫代氨基甲酸钯(II)络合物为前体制造的光敏PdS薄膜的PEC研究的首次演示。

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