Epitaxial growth of CaO films on MgO(001) surface: Strain relaxation at the CaO/MgO heterointerface

H. D. Li; X. N. Zhang; Z. ZhangZ. X. MeiX. L. DuQ. K. Xue

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Epitaxial growth of CaO films on MgO(001) surface: Strain relaxation at the CaO/MgO heterointerface

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The epitaxial growth of CaO films on mechanical-damage-free MgO(001) surface usinglow-temperature buffer technique has been carefully investigated. The strain is effectively relaxed in the CaO/MgO interfacial layers by lattice distortion and misfit dislocations as confirmed by transmission electron microscopy, which facilitates the subsequent growth of smooth CaO film at high temperature. The strain relaxation mechanism of the heterointerface is discussed in detail.

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来源
《Journal of Applied Physics》 |2007年第4期|046103-1-046103-3-0|共3页
作者
H. D. Li; X. N. Zhang; Z. ZhangZ. X. MeiX. L. DuQ. K. Xue;
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作者单位

Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
中图分类应用物理学;计量学;
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Epitaxial growth of CaO films on MgO(001) surface: Strain relaxation at the CaO/MgO heterointerface

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