The Impact of chemical ordering on the dielectric properties of lead scandium tantalate Pb(Sc_(1/2)Ta_(1/2))O_(3) thin films

K. Brinkman; Y. Wang; D. SuA. TagantsevP. MuraltN. Setter

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The Impact of chemical ordering on the dielectric properties of lead scandium tantalate Pb(Sc_(1/2)Ta_(1/2))O_(3) thin films

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The impact of chemical ordering on the dielectric properties of the thin film relaxorPb(Sc_(1/2)Ta_(1/2))O_(3) (PST) was investigated. It was found that the dielectric permittivity increased with increased B site order, directly opposite the behavior observed in ceramics. Highly ordered PST thin films on sapphire substrates were found to behave as conventional ferroelectrics with dielectric permittivities near 7000 and well developed polarization hysteresis loops below the phase transition temperature. In contrast, disordered thin films were found to exhibit relaxor behavior with the thin film permittivity reduced by an order of magnitude as compared to ceramic specimens. The direct experimental evidence of highly ordered films and ceramics possessing similar properties under similar processing conditions points to intrinsic differences in the thin film relaxor state as compared to the ceramic relaxor state. It is proposed that the low processing temperatures employed in thin film fabrication do not provide sufficient energy to achieve the same state of "disorder" which is found in ceramic specimens sintered at high temperatures.

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《Journal of Applied Physics》 |2007年第4期|044110-1-044110-7-0|共7页
作者
K. Brinkman; Y. Wang; D. SuA. TagantsevP. MuraltN. Setter;
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作者单位

Ecole Polytechnique Federale de Lausanne (EPFL), Ceramics Laboratory, CH-1015 Lausanne, Switzerland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;计量学;
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The Impact of chemical ordering on the dielectric properties of lead scandium tantalate Pb(Sc_(1/2)Ta_(1/2))O_(3) thin films

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