Self-organization of 6H-SiC(0001) surface under keV ion irradiation

Katharria  YS; Kumar  S; Lakshmy  PSKanjilal  D

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Self-organization of 6H-SiC(0001) surface under keV ion irradiation

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In the present study, we have investigated the temporal evolution of 6H-SiC (0001) surface under 100 keV Ar+ ion irradiation at oblique incidence (theta=60 degrees). The topographical changes introduced by ion beam were examined using scanning force microscopy, and it is demonstrated that while at short time scales, surface morphology is dominated by dots with average diameter of 30 nm, periodic height modulations or ripples emerge at the later time scales. Existing theories of ripple formation have been invoked to explain various features of the observed ripples. Ripple structures developed on a physically stable material such as SiC are expected to show very small time degradation and therefore, would be more advantageous for various technological applications as compared to those grown on conventional semiconductors such as Si, GaAs, InP, etc. (c) 2007 American Institute of Physics.

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来源
《Journal of Applied Physics》 |2007年第4期|44301-1-44301-6-0|共6页
作者
Katharria YS; Kumar S; Lakshmy PSKanjilal D;
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作者单位

Inter Univ Accelerator Ctr, New Delhi 110067, India;

Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
关键词
SPUTTERED SURFACES; PATTERN-FORMATION; RIPPLE FORMATION; BOMBARDED SI(001); RAMAN-SCATTERING; EROSION RATES; SCALING LAWS; ENERGY; INP; ELECTRON;

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Self-organization of 6H-SiC(0001) surface under keV ion irradiation

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