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首页> 外文期刊>Journal of Applied Physics >Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 mu m application
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Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 mu m application

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摘要

A GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GaAs/GaAsSbN/GaAs p-i-n photodiode with response up to 1.3 mu m. Deep level transient spectroscopy measurement on the GaAs/GaAsSbN/GaAs reveals two types of hole traps (HTs) in the GaAsSbN i layer; (i) HT1: a shallow N-related defect state (E-a similar to 0.10-0.12 eV) and (ii) HT2: an As-Ga point defect-related midgap defect state with E-a similar to 0.42-0.43 eV. Reduction in growth temperature from 480 to 420 degrees C reduces the HT2 trap concentration from 4x10(15) to 1x10(15) cm(-3), while increases the HT1 trap concentration from 1x10(14) to 7x10(14) cm(-3). Reduction in the HT2 trap concentration following growth temperature reduction was attributed to the suppression of As-Ga point defect formation. Evidence of possible change of the As-Ga midgap state to a shallow level defect due to the formation of (As-Ga-N-As) pairs was also suggested to have increased the HT1 trap concentration and reduced the HT2 trap concentration. An similar to 4 dBm improvement in photoresponse under 1.3 mu m laser excitation and approximately eight times reduction in dark current at -8 V reverse bias were attributed to the reduction in the overall trap concentration and mainly the reduction of the As-Ga-related midgap trap concentration in the sample grown at 420 degrees C. (C) 2007 American nstitute of Physics.

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