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首页> 外文期刊>Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application >E-beam pumped blue-green VCSEL based on ZnCdSe/ZnSe MQW structure grown by MBE on ZnSe substrate
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E-beam pumped blue-green VCSEL based on ZnCdSe/ZnSe MQW structure grown by MBE on ZnSe substrate

机译：MBE在ZnSe衬底上生长的基于ZnCdSe / ZnSe MQW结构的电子束泵浦蓝绿色VCSEL

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摘要

ZnCdSe/ZnSe multiple quantum well structures (MQW) grown by molecular-beam epitaxy (MBE) on a ZnSe substrate have been studied. A vertical-cavity surface-emitting laser has been fabricated. The active medium consisted of the MQW structure and part of the substrate. The lasing action under longitudinal pump by a scanning electron beam with electron energy E-e from 40 to 70 keV has been obtained. The threshold current density was 60 A/cm(2) at T = 80 K and E-e = 65 keV. The output power was 0.15 W at lambda = 465 nm. The efficiency of the electron excitation and threshold carrier density were estimated. The cavity has exhibited lasing at T = 300 K only from ZnSe, owing to the fact that the optical gain occurred in the substrate. Some approaches to improve characteristics of lasers based on MQW structures grown on ZnSe substrates are discussed. [References: 13]
机译：研究了通过分子束外延（MBE）在ZnSe衬底上生长的ZnCdSe / ZnSe多量子阱结构（MQW）。已经制造出垂直腔面发射激光器。活性介质由MQW结构和部分底物组成。通过扫描电子束在40到70 keV的电子能量E-e下获得了在纵向泵浦下的激射作用。在T = 80 K和E-e = 65 keV时，阈值电流密度为60 A / cm（2）。在λ= 465 nm时，输出功率为0.15W。估计了电子激发效率和阈值载流子密度。由于在衬底中发生了光学增益，因此仅在ZnSe的情况下，腔在T = 300 K处出现了激光。讨论了一些基于在ZnSe衬底上生长的MQW结构来改善激光器特性的方法。 [参考：13]

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