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首页> 外文期刊>Laser Focus World: The Magazine for the Photonics & Optoelectronics Industry >MICRODISPLAYS: Green, blue InGaN (mu)LED microdisplay delivers video images
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MICRODISPLAYS: Green, blue InGaN (mu)LED microdisplay delivers video images

机译：微型显示器：绿色，蓝色InGaN（mu）LED微型显示器可提供视频图像

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摘要

Not only is its luminance level several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays, but a new video-capable emissive indium-gallium-nitride (InGaN) micro-LED ((mu)LED)-based microdisplay also has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and IC assembly. The GaN (mu)LED microdisplay--currently operational in monochrome blue or green only, with 640 X 480 pixels and a chip size of 9.6 X 7.2 mm--was demonstrated by scientists from Texas Tech University and III-N Technology (both in Lubbock, TX) and the US Army Night Vision and Electronic Sensors Directorate (Fort Belvoir, VA). Until now, semiconductor microdisplays were incapable of delivering video images because only one row of a monolithic (mu)LED array could be accessed at any one time, making the task of connecting the huge number of required drive circuits within the array nearly impossible. But these roadblocks were overcome through three key developments: 1) fabrication of low-contact-resistance (mu)LEDs with a 12 (mu)m pixel size; 2) design and fabrication of an active-matrix driver IC through a CMOS process; and 3) hybrid integration of an InGaN (mu)LED array with a silicon CMOS IC chip using flip-chip bonding with tiny 6-(mu)m-diameter indium bumps.
机译：它的亮度不仅比液晶显示器（LCD）和有机发光二极管（OLED）显示器高出几个数量级，而且还具有新型视频功能的氮化铟镓（MicroGaN）微型LED（基于μ（μLED）的微型显示器还具有低电压要求，并且适合于混合互补金属氧化物半导体（CMOS）和IC组件。得克萨斯理工大学和III-N技术公司的科学家展示了GaN（mu）LED微型显示器-目前仅以单色蓝色或绿色运行，具有640 X 480像素，芯片尺寸为9.6 X 7.2 mm。德克萨斯州拉伯克市）和美国陆军夜视和电子传感器局（弗吉尼亚州贝尔沃堡）。迄今为止，半导体微型显示器无法传送视频图像，因为在任何时候都只能访问单行（mu）LED阵列的一行，因此几乎不可能完成在阵列中连接大量所需驱动电路的任务。但是，这些障碍通过三个关键的发展得以克服：1）制造尺寸为12μm的低接触电阻（mu）LED; 2）通过CMOS工艺设计和制造有源矩阵驱动器IC; 3）使用倒装芯片键合和直径微小的6μm铟凸点的InGaN（μ）LED阵列与硅CMOS IC芯片的混合集成。

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