Film thickness dependence on the electrical and optical properties of PtSi/p-Si(100) Schottky barrier detector

Lyu YT.; Lee CT.; Horng GJ.Ho C.Lee CY.Wu CS.

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Film thickness dependence on the electrical and optical properties of PtSi/p-Si(100) Schottky barrier detector

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We report the PtSi film thickness dependence on the electrical barrier height and quantum efficiency of PtSi Schottky barrier detector (SBD). The thickness of the PtSi film was varied from 20 to 120 Angstrom. The electrical barrier height of the SBD is about 0.186+/-0.002 eV. It was observed that the grain size and the film thickness have negligible effect on the electrical barrier height. However, the quantum efficiency of the SBDs is strongly dependent on the film thickness. When the PtSi thickness is about 80 Angstrom, the quantum efficiency exhibits its peak value exceeding 1. The positive quantum efficiency dependence on the film thickness is referred to the enhancement of elastic phonon scattering and the absorption dependence on the film thickness. When the film thickness is thicker than 80 Angstrom, the decrease of the quantum efficiency is deduced from the inelastic scattering, like hole/hole scattering, imperfection scattering and impurity scattering during the hot hole transporting to the PtSi/Si interface. (C) 2002 Elsevier Science B.V. All rights reserved. References: 14

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《Materials Chemistry and Physics》 |2002年第2期|177-181|共5页
作者
Lyu YT.; Lee CT.; Horng GJ.Ho C.Lee CY.Wu CS.;
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作者单位

Project Leader,Animal Health and Welfare,Cheshire County Council;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
中图分类工程材料学;工程基础科学;
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1. The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector [J] . Gwo-Ji Horng, Chun-Yen Chang, Chia HoChing-Yuan LeeT. Y. Huang Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films . 2000,第1期

机译：The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector
2. Platinumsilicide Schottky barrier infrared detectors with a grating: Dependence of the optical response on wavelength and polarization [J] . K. Kapser, P. P. Deimel, W. PlatzU. Prechtel applied physics letters . 1994,第16期

机译：Platinumsilicide Schottky barrier infrared detectors with a grating: Dependence of the optical response on wavelength and polarization
3. A Study on Annealing Process Influenced Electrical Properties of Ni/CeO_2/p-Si/Al Schottky Barrier Diodes [J] . Nanda Kumar Reddy Nallabala, Venkata Krishnaiah Kummara, Yuvaraj ChinnappaP. P. GeorgeV. ManjunathJagadeesh SanniboinaS. Manikanteswara ReddyNethaji Reddy Gangasani Macromolecular symposia . 2021,第1期

机译：A Study on Annealing Process Influenced Electrical Properties of Ni/CeO_2/p-Si/Al Schottky Barrier Diodes
4. Thickness dependence and doping effect on transport properties of post-hydrogenated amorphous silicon films prepared by vacuum evaporation. [O] . 1988

机译：Thickness dependence and doping effect on transport properties of post-hydrogenated amorphous silicon films prepared by vacuum evaporation.

Film thickness dependence on the electrical and optical properties of PtSi/p-Si(100) Schottky barrier detector

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