Hafnium silicate: a new microwave dielectric ceramic with low thermal expansivity

Varghese Jobin; Joseph Tony; Surendran K. P.Rajan T. P. D.Sebastian M. T.

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Hafnium silicate: a new microwave dielectric ceramic with low thermal expansivity

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A HfSiO4 ceramic was prepared by a conventional solid state synthesis method by sintering at 1600 degrees C. The morphology of the sintered surface was characterized using scanning electron microscopy and atomic force microscopy and the average surface roughness was about 118 nm. The sintered HfSiO4 ceramic has epsilon(r) = 7.0, Q(u) x f = 25 000 and tau(f) = -44 ppm degrees C-1 at 10 GHz. It exhibits promising thermal properties such as a low linear thermal expansivity (CTE) of -1.8 ppm degrees C-1 (dilatometer) in the temperature range of 30-800 degrees C and a room temperature thermal conductivity of 11 W m(-1) K-1.

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《Dalton transactions: An international journal of inorganic chemistry》 |2015年第11期|5146-5152|共7页
作者
Varghese Jobin; Joseph Tony; Surendran K. P.Rajan T. P. D.Sebastian M. T.;
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CSIR NIIST, Div Mat Sci & Technol, Funct Mat Grp, Thiruvananthapuram 695019, Kerala, India;

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正文语种英语
中图分类化学;无机化学;
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Hafnium silicate: a new microwave dielectric ceramic with low thermal expansivity

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