Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

Ding SJ.; Wan XG.; Wang PF.Zhang JY.Zhang DW.Wang JT.Chen L.

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Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

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Carbon and fluorine-doped silicon oxide (SiO2:C,F) films with low dielectric constant have been deposited from tetraethoxysilane (TEOS), C4F8 and Ar using plasma enhanced chemical vapor deposition (PECVD) method. X-ray diffraction (XRD) analysis shows that SiO2:C,F film is amorphous. Fourier transform infrared (FTIR) spectra illustrate that the intense absorption band between 1000 and 1300 cm(-1) becomes broader with increasing C4F8 flow rate which indicates that the amount of fluorocarbon compound incorporated into the film increases. C Is X-ray photoelectron spectrum reveals that the fluorocarbon compound has a high degree of cross-linked structure because of the existence of only C-F bonds. By fitting the absorption band of Si-F-n at about 940 cm(-1) and Si 2p X-ray photoelectron spectrum using Gaussian profile, we can consider that there are (O-)(2)Si(-F)(2) and (O-)(3)Si-F groups in the deposited films, and the former is less than the latter. The measurements of capacitance-voltage (C-V) characteristics of the films indicate that the dielectric constant of the deposited film decreased with increasing C4F8 flow rate which is in accord with the increase in the frequency of Si-O stretching mode. When the flow rate ratio Of C4F8 to TEOS is equal to 1.8, the dielectric constant of the film amounts to 2.35 at 1 MHz. (C) 2001 Elsevier Science BN. All rights reserved. References: 30

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《Materials Chemistry and Physics》 |2001年第2期|125-130|共6页
作者
Ding SJ.; Wan XG.; Wang PF.Zhang JY.Zhang DW.Wang JT.Chen L.;
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Fudan Univ, Dept Elect Engn, Shanghai 200433, Peoples R China, .;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
中图分类工程材料学;工程基础科学;
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Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

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