MOVPE growth of ZnSe films on ZnO/Si templates

Wang  XH; Fan  XW; Shan  CXZhang  ZZZhang  JYLu  YMLiu  YCShen  DZSu  YKChang  SJ

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MOVPE growth of ZnSe films on ZnO/Si templates

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We report the growth and characterization of ZnSe films prepared on ZnO/Si(1 1 1) templates. It was found that the as-deposited ZnSe films are highly oriented with zinc blende structure, and the preferred crystal orientation is (1 1 1). The small X-ray diffraction (XRD) full-wide-half-maximum (FWHM) also suggests that the crystal quality of the deposited ZnSe films is reasonably good. From temperature dependent photoluminescence (PL) measurements, it was found that exciton binding energy, E-B, equals 25.6 meV for the as-prepared ZnSe/ZnO/Si(1 1 1) samples. (C) 2004 Elsevier B.V. All rights reserved.

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来源
《Materials Chemistry and Physics》 |2004年第1期|102-105|共4页
作者
Wang XH; Fan XW; Shan CXZhang ZZZhang JYLu YMLiu YCShen DZSu YKChang SJ;
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作者单位

Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
PL; Si substrate; MOVPE; ZnSe; QUANTUM-WELLS; TEMPERATURE-DEPENDENCE; PHOTOLUMINESCENCE; ABSORPTION; SUBSTRATE; SAPPHIRE; EPITAXY; BUFFER; LAYER; GAP;

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MOVPE growth of ZnSe films on ZnO/Si templates

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