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首页> 外文期刊>Radiation Physics and Chemistry >Structural characterization of Mn~+-implanted GaSb crystals
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Structural characterization of Mn~+-implanted GaSb crystals

机译：Mn〜+注入的GaSb晶体的结构表征

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摘要

Implantation creates an opportunity for creation of ferromagnetic MnSb inclusions, which may be of interest for application in spintronics. Three sets of Mn-ion implanted (001) and (111) GaSb crystals prepared at different implantation and annealing conditions were investigated by X-ray diffraction methods applying both the standard laboratory source and synchrotron radiation. Polycrystalline phase of GaSb, formed as a result of GaSb matrix damage, was detected for all samples. For the same samples Sb and MnO2 inclusions were also observed. The phase composition of the samples is found to depend mainly on the energy and dose of Mn ions during the implantation process. For the lowest Mn dose, the layered structure was found. The strain caused by implanted buried layer depends on substrate temperature during implantation; an increased implantation temperature leads to strain relaxation.
机译：注入为铁磁MnSb夹杂物的产生创造了机会，这可能是自旋电子学中应用的兴趣所在。采用标准实验室光源和同步加速器辐射，通过X射线衍射方法研究了在不同注入和退火条件下制备的三组Mn离子注入的（001）和（111）GaSb晶体。对所有样品均检测到由于GaSb基质损坏而形成的GaSb多晶相。对于相同的样品，还观察到了Sb和MnO2夹杂物。发现样品的相组成主要取决于注入过程中锰离子的能量和剂量。对于最低的Mn剂量，发现了层状结构。由埋入的埋层引起的应变取决于注入过程中的衬底温度。较高的植入温度导致应变松弛。

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