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Photoluminescence and wettability control of NiFe/ZnO heterostructure bilayer films

机译:NiFe / ZnO异质结构双层膜的光致发光和润湿性控制

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The controllable photoluminescence and wettability of NiFe/ZnO heterostructure bilayer films have been demonstrated by applying an ultrathin NiFe capping layer onto ZnO films by radio-frequency magnetron sputtering at room temperature without introducing any oxygen gas during the deposition process. High quality crystalline ZnO(002) textured films were fabricated at first and displayed a remarkable near-band-edge emission peak located at around 370 nm with a bandgap of 3.35 eV confirmed by room temperature photoluminescence spectra. Once the ZnO films were capped with a single NiFe layer, ranging from 5 to 20 nm in thickness, the intensity of their near-band-edge emission peak decreased and the emission band shifted to 414 nm. On the other hand, the contact angle of the uncapped ZnO film increased from 88 degrees to 101 degrees with the addition of a 10 nm thick NiFe capping layer. This means that the ultrathin NiFe layer acted as a surfactant layer. The surface wettability could be switched from hydrophilic to hydrophobic due to the varied surface free energy caused by the controllable grain morphology of the NiFe/ZnO heterostructures. This work demonstrates that a direct NiFe capping layer can effectively control the optical, surface and magnetic characteristics in NiFe/ZnO heterostructures depending on the bimetallic NiFe thickness and provide valuable multifunctional behaviors for potential novel magnetoelectric applications.
机译:NiFe / ZnO异质结构双层膜的可控光致发光和润湿性已通过在室温下通过射频磁控溅射在ZnO膜上施加超薄NiFe覆盖层而在沉积过程中不引入任何氧气的情况下得到证实。首先制备了高质量的结晶ZnO(002)织构薄膜,该薄膜在370 nm附近显示了一个显着的近带边缘发射峰,通过室温光致发光光谱证实其带隙为3.35 eV。 ZnO薄膜被一层厚度为5至20 nm的NiFe层覆盖后,其近带边缘发射峰的强度下降,发射带移至414 nm。另一方面,通过添加10 nm厚的NiFe覆盖层,未覆盖的ZnO膜的接触角从88度增加到101度。这意味着超薄NiFe层充当表面活性剂层。由于NiFe / ZnO异质结构的可控晶粒形态导致表面自由能变化,因此表面润湿性可以从亲水性切换为疏水性。这项工作表明,直接的NiFe覆盖层可以有效地控制NiFe / ZnO异质结构中的光学,表面和磁性特征,具体取决于双金属NiFe的厚度,并为潜在的新型磁电应用提供有价值的多功能行为。

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